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Physical Sciences Inc. (PSI) has been awarded a contract from the US Army to develop and mature an ultra-low noise avalanche photodiode (APD) with single-photon sensitivity between 2.0 – 2.5 µm.
The photodetector technology, pioneered jointly by PSI and its university partners, is based on digital alloys of AlInAsSb. The combination of the favorable electronic properties of AlInAsSb with a photonic light-trapping nanostructure enables our photodetector technology to replace state-of-the-art HgCdTe detectors while offering higher performance at lower cost. Moreover, the team’s APD technology operates at lower reverse-bias voltage than presently-available 2 µm detectors, enabling integration with Si CMOS readout circuitry for low power-consumption digital infrared focal plane APD arrays.
For more information contact:
Dr. David Woolf
Group Leader, Structured Optical Materials
dwoolf@psicorp.com
Physical Sciences Inc.
Office: (978) 689-0003
Acknowledgement of Sponsorship: This work is supported under a contract with the U.S. Army. This support does not constitute an express or implied endorsement on the part of the Government.