Orientation Patterned Gallium Arsenide (OP-GaAs)
We use a wafer-scale process to produce the nonlinear optical material called orientation-patterned gallium arsenide (OP-GaAs) and offer for commercial sale frequency converter devices based on this new, high efficiency material. The material is patterned to facilitate efficient nonlinear optical frequency conversion using the process of quasi-phasematching (QPM).
Key Features
OP-GaAs is particularly well-suited for the production of tunable radiation in two atmospheric transmission windows:
The mid-wave infrared (wavelengths between 3 µm and 5 µm) and the long-wave infrared (wavelengths between 8 µm and 12 µm). The high nonlinear coefficient of OP-GaAs makes it an ideal material for the frequency conversion of lasers with relatively high average powers (> 1 W) and relatively low peak powers (< 50 kW) such as continuous-wave lasers or high-repetition-rate diode-pumped solid-state lasers.
OP-GaAs chips
