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Abstract: Wafer-fused orientation-patterned GaAs
Jin Li, David B. Fenner, Krongtip Termkoa, Mark G. Allen, Peter F. Moulton, Candace Lynch, David F. Bliss, William D. Goodhue,
"Wafer-fused orientation-patterned GaAs
,"
presented at SPIE Photonics West
(San Jose, CA)
,
(19-24 January2008).
Copyright © 2008 Society of Photo-Optical Instrumentation Engineers.
This paper was published in SPIE Photonics West,
and is made available as an electronic reprint (preprint)
with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple
reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this
paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Abstract
The fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process
where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a
thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was
fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and
lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 µm thick OP-GaAs film was grown on the template at an average rate of ~70 µm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stainetched cross sections. The optical loss at ~2 µm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semi-insulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phasematching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries.
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